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| AO4442 N-Channel Enhancement Mode Field Effect Transistor General Description The AO4442 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages from 4.5V to 25V. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4442 is Pb-free (meets ROHS & Sony 259 specifications). AO4442L is a Green Product ordering option. AO4442 and AO4442L are electrically identical. Features VDS (V) = 75V ID = 3.1A (VGS = 10V) RDS(ON) < 130m (VGS = 10V) RDS(ON) < 165m (VGS = 4.5V) D S S S G D D D D SOIC-8 G S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation B Maximum 75 25 3.1 2.5 20 2.5 1.6 -55 to 150 Units V V A TA=25C TA=70C TA=25C TA=70C ID IDM PD TJ, TSTG W C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t 10s Steady-State Steady-State RJA RJL Typ 38 69 24 Max 50 80 30 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. AO4442 Electrical Characteristics (T J=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.5V, ID=2A Forward Transconductance VDS=5V, ID=3.1A Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current Conditions ID=10mA, VGS=0V VDS=60V, VGS=0V TJ=55C VDS=0V, VGS=25V VDS=VGS, ID=250A VGS=10V, VDS=5V VGS=10V, ID=3.1A TJ=125C 1 20 100 180 120 8.2 0.79 1 10 303 VGS=0V, VDS=37.5V, f=1MHz VGS=0V, VDS=0V, f=1MHz 37 17 2.2 5.2 VGS=10V, VDS=37.5V, ID=3.1A 2.46 1 1.34 4.5 VGS=10V, VDS=37.5V, RL=12, RGEN=3 IF=3.1A, dI/dt=100A/s 2.3 15.6 1.9 22 22 30 3 6.5 3.5 350 130 220 165 2.4 Min 75 1 5 100 3 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=3.1A, dI/dt=100A/s A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. Rev 1 : Sept 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. AO4442 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 25 20 ID (A) 15 10 5 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 220 Normalized On-Resistance 200 180 RDS(ON) (m) 160 140 120 100 80 0 6 8 10 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 2 4 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature VGS=10V VGS=4.5V 2.2 2 1.8 1.6 1.4 1.2 1 VGS=4.5V ID=2A VGS=10V ID=3.1A 7V 5V 4.5V VGS=4V 2 3.5V 0 2 2.5 3 3.5 4 4.5 5 VGS(Volts) Figure 2: Transfer Characteristics ID(A) 10V 6V 10 8 6 4 25C VDS=5V 125C 240 220 200 RDS(ON) (m) IS (A) 180 160 140 120 100 80 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C 125C ID=3.1A 1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics 125C 25C Alpha & Omega Semiconductor, Ltd. AO4442 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 VDS=37.5V ID=3.1A Capacitance (pF) 400 350 300 250 200 150 100 50 0 0 3 4 5 Qg (nC) Figure 7: Gate-Charge Characteristics 1 2 6 0 0 30 40 50 VDS (Volts) Figure 8: Capacitance Characteristics 10 20 60 Crss Coss Ciss 8 VGS (Volts) 6 4 2 100.0 40 TJ(Max)=150C, TA=25C 10s 100s 1ms 10ms 1s 0.1s 10s DC 30 Power (W) TJ(Max)=150C TA=25C 10.0 ID (Amps) RDS(ON) limited 1.0 20 0.1 10 0.0 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 ZJA Normalized Transient Thermal Resistance 10 100 0 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note E) D=Ton/T TJ,PK=TJ+PDM.ZJA.RJA RJA=50C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Single Pulse 0.0001 0.001 0.01 0.1 1 Ton 0.01 0.00001 T 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. |
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